Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-11-01
2005-11-01
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257S316000, C257S347000, C438S200000, C438S257000
Reexamination Certificate
active
06960805
ABSTRACT:
The present invention relates to a flash memory cell and method of manufacturing the same, and programming/erasing/reading method in the flash memory cell. According to the present invention, a source region and a drain region are first formed and a tunnel oxide film is then formed. Therefore, it is possible to prevent damage of the tunnel oxide film due to an ion implantation process. Further, independent two channel regions are formed below the floating gate. Thus, it is possible to store data of two or more bits at a single cell. In addition, the tunnel oxide film, the floating gate and the dielectric film having an ONO structure are formed at a given regions. It is thus possible to reduce the steps of a process and improve an electrical characteristic and integration level of a device.
REFERENCES:
patent: 5168334 (1992-12-01), Mitchell et al.
patent: 5429969 (1995-07-01), Chang
patent: 5889302 (1999-03-01), Liu
patent: 5898619 (1999-04-01), Chang et al.
patent: 5998829 (1999-12-01), Choi et al.
patent: 6044022 (2000-03-01), Nachumovsky
patent: 6054734 (2000-04-01), Aozasa et al.
patent: 6087230 (2000-07-01), Kishi
patent: 6181597 (2001-01-01), Nachumovsky
patent: 6191445 (2001-02-01), Fujiwara
patent: 6269023 (2001-07-01), Derhacobian et al.
patent: 6331465 (2001-12-01), Forbes et al.
patent: 6348381 (2002-02-01), Jong et al.
patent: 6433384 (2002-08-01), Hashimoto
patent: 6436765 (2002-08-01), Liou et al.
patent: 6461906 (2002-10-01), Lung
patent: 6477085 (2002-11-01), Kuo
patent: 6482706 (2002-11-01), Yeh et al.
patent: 6493280 (2002-12-01), Mihnea et al.
patent: 6500710 (2002-12-01), Nakagawa
patent: 6514831 (2003-02-01), Liu
patent: 6566682 (2003-05-01), Forbes
patent: 6573169 (2003-06-01), Noble et al.
patent: 6583466 (2003-06-01), Lin et al.
patent: 6610586 (2003-08-01), Liu
patent: 6627555 (2003-09-01), Eitan et al.
patent: 6627945 (2003-09-01), Tripsas et al.
Ahn Byung Jin
Chung Sung Jae
Park Byung Soo
Mayer Brown Rowe & Maw LLP
Nelms David
Nguyen Dao H.
LandOfFree
Flash memory cell and method of manufacturing the same, and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Flash memory cell and method of manufacturing the same, and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory cell and method of manufacturing the same, and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3513456