Process of forming bonding columns

Details Process of forming bonding columns Process of forming bonding columns

2005-06-07

2005-06-07

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S613000, C438S612000

Reexamination Certificate

active

06902997

ABSTRACT:
A bonding column fabrication process for forming boding columns over a wafer. First, a mask layer is formed over the active surface of a wafer. The mask has a plurality of openings that exposes chip pads (or electrode pads) on the active surface of the wafer. A high-velocity physical metal deposition process is conducted to form at least one metallic material layer over the die pads (or electrode pads) inside the interior sidewalls of the openings. The metallic material layer inside the openings constitutes the bonding columns. Finally, the mask layer is removed and a surface layer is optionally formed over the exposed surface of the bonding columns.

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