Integrated circuit with dielectric diffusion barrier layer...

Details Integrated circuit with dielectric diffusion barrier layer... Integrated circuit with dielectric diffusion barrier layer...

2005-12-27

2005-12-27

Smoot, Stephen W. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S752000, C257S759000, C257S760000, C257S762000

Reexamination Certificate

active

06979903

ABSTRACT:
An integrated circuit is provided having a semiconductor substrate with a semiconductor device. A dielectric layer formed over the semiconductor substrate has an opening provided therein. The dielectric layer is of non-barrier dielectric material capable of being changed into a barrier dielectric material. The dielectric layer around the opening is changed into the barrier dielectric material and the conductor core material is deposited to fill the opening. The conductor core is processed to form a channel for the integrated circuit. This allows a selective conversion of dielectric materials with no diffusion barrier properties to be converted into good barrier materials which allows larger channels and shrinkage of the integrated circuit.

REFERENCES:
patent: 5821168 (1998-10-01), Jain
patent: 6147009 (2000-11-01), Grill et al.
patent: 6372114 (2002-04-01), Ito
patent: 6383911 (2002-05-01), Mikagi
patent: 6521533 (2003-02-01), Morand et al.
patent: 6696360 (2004-02-01), Ahn et al.
patent: 2001/0004550 (2001-06-01), Passemard

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