Semiconductor device with SOI region and bulk region and...

Details Semiconductor device with SOI region and bulk region and... Semiconductor device with SOI region and bulk region and...

2005-12-27

2005-12-27

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S349000, C257S250000

Reexamination Certificate

active

06979866

ABSTRACT:
In the SOI region of a semiconductor substrate, a BOX layer is formed underneath with backgate electrodes to control the threshold voltages of MOS transistors formed in the SOI region.

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T. Yamada, et al., “An Embedded DRAM Technology on SOI/Bulk Hybrid Substrate Formed with SEG Process for High-End SOC Application”, 2002 IEEE, 2002 Symposium on VLSI Technology Digest of Technical Papers, 2 Pages.
U.S. Appl. No. 10/653,128, filed Sep. 3, 2003, Azuma et al.
U.S. Appl. No. 10/850,106, filed May 21, 2004, Kohyama.

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