Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-27
2005-12-27
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S758000, C257S759000, C257S760000
Reexamination Certificate
active
06979848
ABSTRACT:
A conductive system and a method of forming an insulator for use in the conductive system is disclosed. The conductive system comprises a foamed polymer layer on a substrate. The foamed polymer layer has a surface that is hydrophobic, and a plurality of conductive structures are embedded in the foamed polymer layer. An insulator is formed by forming a polymer layer having a thickness on a substrate. The polymer layer is foamed to form a foamed polymer layer having a surface and a foamed polymer layer thickness, which is greater than the polymer layer thickness. The surface of the foamed polymer layer is treated to make the surface hydrophobic.
REFERENCES:
patent: 3506438 (1970-04-01), Krock et al.
patent: 3953566 (1976-04-01), Gore
patent: 3956195 (1976-05-01), Topchiashvili et al.
patent: 3962153 (1976-06-01), Gore
patent: 4096227 (1978-06-01), Gore
patent: 4368350 (1983-01-01), Perelman
patent: 4482516 (1984-11-01), Bowman et al.
patent: 4561173 (1985-12-01), Te Velde
patent: 4599136 (1986-07-01), Araps et al.
patent: 4725562 (1988-02-01), El-Kareh et al.
patent: 4749621 (1988-06-01), Araps et al.
patent: 4962058 (1990-10-01), Cronin et al.
patent: 5128382 (1992-07-01), Elliott, Jr. et al.
patent: 5137780 (1992-08-01), Nichols et al.
patent: 5158986 (1992-10-01), Cha et al.
patent: 5158989 (1992-10-01), Ogitani et al.
patent: 5173442 (1992-12-01), Carey
patent: 5227103 (1993-07-01), Muschiatti
patent: 5324683 (1994-06-01), Fitch et al.
patent: 5334356 (1994-08-01), Baldwin et al.
patent: 5340843 (1994-08-01), Tsuruta et al.
patent: 5408742 (1995-04-01), Zaidel et al.
patent: 5449427 (1995-09-01), Wojnarowski et al.
patent: 5470693 (1995-11-01), Sachdev et al.
patent: 5470802 (1995-11-01), Gnade et al.
patent: 5473814 (1995-12-01), White
patent: 5480048 (1996-01-01), Kitamura et al.
patent: 5486493 (1996-01-01), Jeng
patent: 5488015 (1996-01-01), Havemann et al.
patent: 5510645 (1996-04-01), Fitch et al.
patent: 5548159 (1996-08-01), Jeng
patent: 5552638 (1996-09-01), O'Connor
patent: 5554305 (1996-09-01), Wojnarowski et al.
patent: 5591676 (1997-01-01), Hughes et al.
patent: 5593926 (1997-01-01), Fujihira
patent: 5691565 (1997-11-01), Manning
patent: 5747880 (1998-05-01), Havemann et al.
patent: 5773363 (1998-06-01), Derderian et al.
patent: 5780121 (1998-07-01), Endo
patent: 5785787 (1998-07-01), Wojnarowski et al.
patent: 5786630 (1998-07-01), Bhansali et al.
patent: 5798200 (1998-08-01), Matsuura et al.
patent: 5804607 (1998-09-01), Hedrick et al.
patent: 5821621 (1998-10-01), Jeng
patent: 5830923 (1998-11-01), Venkataramm
patent: 5841075 (1998-11-01), Hanson
patent: 5844317 (1998-12-01), Bertolet et al.
patent: 5878314 (1999-03-01), Takaya et al.
patent: 5879787 (1999-03-01), Petefish
patent: 5879794 (1999-03-01), Korleski
patent: 5891797 (1999-04-01), Farrar
patent: 5912313 (1999-06-01), McIntosh et al.
patent: 5923074 (1999-07-01), Jeng
patent: 5926732 (1999-07-01), Matsuura
patent: 5953626 (1999-09-01), Hause et al.
patent: 6025015 (2000-02-01), Landry-Coltrain et al.
patent: 6037245 (2000-03-01), Matsuda
patent: 6037249 (2000-03-01), Chiang et al.
patent: 6040628 (2000-03-01), Chiang et al.
patent: 6043146 (2000-03-01), Watanabe et al.
patent: 6071600 (2000-06-01), Rosenmayer
patent: 6077792 (2000-06-01), Farrar
patent: 6156374 (2000-12-01), Forbes et al.
patent: 6165890 (2000-12-01), Kohl et al.
patent: 6172305 (2001-01-01), Tanahashi
patent: 6195156 (2001-02-01), Miyammoto et al.
patent: 6245658 (2001-06-01), Buynoski
patent: 6251470 (2001-06-01), Forbes et al.
patent: 6265303 (2001-07-01), Lu et al.
patent: 6268637 (2001-07-01), Gardner et al.
patent: 6313518 (2001-11-01), Ahn et al.
patent: 6323125 (2001-11-01), Soo et al.
patent: 6331480 (2001-12-01), Tsai et al.
patent: 6380294 (2002-04-01), Babinec et al.
patent: 6433413 (2002-08-01), Farrar
patent: 6501179 (2002-12-01), Juengling et al.
patent: 6503818 (2003-01-01), Jang
patent: 6512013 (2003-01-01), Hrivnak
patent: 6667219 (2003-12-01), Eldridge
patent: 6734562 (2004-05-01), Farrar
patent: 6890847 (2005-05-01), Farrar
patent: 2001/0034117 (2001-10-01), Eldridge et al.
In: Metals Handbook Ninth Edition, vol. 2 Properties and Selection: Nonferrous Alloys and Pure Metals, ASM International,(1979),pp. 796-797.
“ACCUSPIN T-18 Flowable Spin-On Polymer (SOP)”,AlliedSignal—Advanced Microelectronic Materials, Sunnyvale, CA,(Jul. 1998),pp. 1-2.
“Packaging”,Electronic Materials Handbook, vol. 1, ASM International,(1989),pp. 105, 768-769.
“Properties and Selection: Nonferrous Alloys and Pure Metals”,Metals Handbook Ninth Edition, vol. 2, ASM International,(1979),pp. 157, 395.
Chiniwalla, N..,et al. ,“Structure-Property Relations for Polynorbornenes”,Proceedings from the Eighth Meeting of the Dupont Symposium on Polymides In Microelectronics, (1998),pp. 615-642.
Conti, R..,et al. ,“Processing Methods to Fill High Aspect Ratio Gaps Without Premature Constriction”,1999 Proceedings of Dielectrics for Multilevel Interconnection Conference, (1999),pp. 201-209.
Craig, J..D. ,“Polymide Coatings”,In: Packaging, Electronic Materials Handbook, vol. 1, ASM International Handbook Committee (eds.), ASM International, Materials Park, OH,(1989),767-772.
Jayaraj, K..,et al. ,“Low Dielectric Constant Microcellular Foams”,Proceedings from the Seventh Meeting of the DuPont Symposium on Polymides in Microelectrics, (Sep. 1996),pp. 474-501.
Jin, C..,et al. ,“Porous Xerogel Films as Ultra-low Permittivity Dielectrics for ULSI Interconnect Applications”,Conference Proceedings ULSI XII—1997 Materials Research Society, (1997),pp. 463-469.
Miller, R..D. ,et al. ,“Low Dielectric Constant Polyimides and Polymide Nanofoams”,Seventh Meeting of the DuPont Symposium on Polyimides in Microelectronics, (Sep. 1996),pp. 443-473.
Ramos, T.,et al. ,“Nanoporous Silica for Dielectric Constant Less Than 2”,Conference Proceedings ULSI XII—1997 Materials Research Society, (1997),455-461.
Remenar, J..,et al. ,“Templating Nanopores into Poly (Methysilsesquioxane): New-Low Dielectric Coatings Suitable for Microelectronic Applications”,Materials Research Society Symposium Proceedings, 511, (1998),pp. 69-74.
Shibasaki, T..,et al. ,“Process and Application of Fumed Silica AEROSIL”,3rd Annual Workshop on Mechanical Polishing, Lake Placid, New York,(1998),pp. 1-27.
Singer, P..,“The new low-k candidate: It's a gas”,Semiconductor International, 22(3), (1999),p. 38.
Ting, C..H. ,“Low K Material/Process Development”,1996 VLSI Multilevel Interconnection State-of-the-Art Seminar, (Jun. 1996),pp. 171-212.
Van Vlack, L..H. ,Elements of Materials Science, Addison-Wesley Publishing Co., Inc. Reading, MA,(1959),p. 468.
Vardaman, E..J. ,“Future Packaging Trends: CSP vs. Flip Chip”,11th European Microelectrics Conference, (1997),pp. 295-299.
Volksen, W..,et al. ,“Characterization and Processing Considerations for Methylsilsesquioxane Based Dialectricts”,Proceedings of the Fifth Dialectric for ULSI Multilevel Interconnections, Santa Clara, CA,(1999),pp. 83-90.
Grove, N. , et al., “Functionalized Polynorbornene Dielectric Polymers: Adhesion and Mechanical Properties”,Journal of Polymer Science, (1999), pp. 3003-3010.
Labadie, J. , et al., “Nanopore Foams of High Temperature Polymers”,IEEE Transactions on Components, Hybrids, and Manufacturing Technology, 15, (Dec., 1992), pp. 925-930.
Sacrificial Underlayer airbridge Formation, Simon Frazer University, Aug. 1999 MWD CSTC (Ottawa).
Abraham Fetsum
Micro)n Technology, Inc.
Schwegman Lundberg Woessner & Kluth P.A.
LandOfFree
Memory system with conductive structures embedded in foamed... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Memory system with conductive structures embedded in foamed..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory system with conductive structures embedded in foamed... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3511373