Method of manufacturing a semiconductor film and method of...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C438S479000

Reexamination Certificate

active

06962837

ABSTRACT:
In a method of manufacturing a semiconductor film, nickel elements are first held as indicated by103on the surface of an amorphous silicon film102. Then a crystalline silicon film104is obtained by a heat treatment. At this time, the crystallization is remarkably improved by the action of the nickel elements. During this crystallization, nickel elements are diffused in a film. Then a thermal oxide film105is formed as a barrier film, and a silicon film106containing a high concentration of phosphorus is formed. By carrying out a heat treatment, the nickel elements in the crystalline silicon film104are transferred into the silicon film106. In this way, the concentration of nickel in the crystalline silicon film104is lowered.

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