Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-11-08
2005-11-08
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S479000
Reexamination Certificate
active
06962837
ABSTRACT:
In a method of manufacturing a semiconductor film, nickel elements are first held as indicated by103on the surface of an amorphous silicon film102. Then a crystalline silicon film104is obtained by a heat treatment. At this time, the crystallization is remarkably improved by the action of the nickel elements. During this crystallization, nickel elements are diffused in a film. Then a thermal oxide film105is formed as a barrier film, and a silicon film106containing a high concentration of phosphorus is formed. By carrying out a heat treatment, the nickel elements in the crystalline silicon film104are transferred into the silicon film106. In this way, the concentration of nickel in the crystalline silicon film104is lowered.
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Fourson George
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Toledo Fernando L.
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