Integrated circuit memory devices having asynchronous...

Electrical computers and digital processing systems: memory – Storage accessing and control – Shared memory area

Reexamination Certificate

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Details

C711S150000, C365S189050, C365S189040, C365S230050, C365S230080

Reexamination Certificate

active

06934816

ABSTRACT:
Asynchronous memory devices utilize loopback circuitry to provide efficient and high speed “flow-through” of write data when conventional flow-through operations are not available. An exemplary memory device includes a memory array having first and second ports that can each support asynchronous read and write access and a first input/output control circuit. The first input/output control circuit is electrically coupled to the first port and includes a first sense amplifier, which is configured to receive read data from the first port, and a first bypass latch having an output coupled to the first sense amplifier. A second input/output control circuit is also provided. The second input/output control circuit is electrically coupled to the second port and includes a second sense amplifier, which is configured to receive read data from the second port, and a second bypass latch.

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High-Speed 4K×18 Dual-Port Static Ram, IDT7034S/L, IDT, Sep. 1999, 19 pages.

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