Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-06-21
2005-06-21
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S486000, C438S487000, C438S488000, C438S502000, C438S509000, C438S166000, C438S482000, C438S479000, C438S471000
Reexamination Certificate
active
06908797
ABSTRACT:
The present invention provides a manufacturing method of a semiconductor device, which is able to improve on-current and mobility of a polycrystal TFT without disturbing a high integration level, and also provide a semiconductor device obtained in accordance with the manufacturing method. The manufacturing method comprises steps of adding a catalytic element to a semiconductor film and heating the semiconductor film to form a more crystallized first region; forming a less crystallized second region than the first region; irradiating first laser light to the first region to form a more crystallized third region than the first region; irradiating second laser light to the second region to form a more crystallized fourth region than the second region; and patterning the third region to form a first island-shaped region and the fourth region to form a second island-shaped region, wherein the first laser light has the same energy density from the second laser light, and a scan speed of the first laser light is faster than that of the second laser light.
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Sato et al., “Mobility Anisotropy of Electrons in Inversion Layers on Oxidized Silicon Surfaces,” Physical Review B4, 1971, pp. 1950-1960.
Keshavan Belur V
Robinson Eric J.
Robinson Intellectual Property Law Office
Semiconductor Energy Laboratory Co,. Ltd.
Smith Matthew
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