Thermally processing semiconductor wafers at non-ambient pressur

Details Thermally processing semiconductor wafers at non-ambient pressur Thermally processing semiconductor wafers at non-ambient pressur

1992-04-22

1993-03-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437105, 437 81, 118715, 118724, 118 50, H01L 2126

Patent

active

051944014

ABSTRACT:
A thermal reactor system for semiconductor processing incorporates a reaction vessel with a rectangular quartz tube with reinforcing parallel quartz gussets. The gussets enable sub-ambient pressure processing, while the rectangular tube maximizes reactant gas flow uniformity over a wafer being processed. The gussets facilitate effective cooling, while minimally impairing heating of the wafer by allowing minimal wall thickness. The thermal reactor system further includes a gas source for supplying reactant gas and an exhaust handling system for removing spent gases from and establishing a reduced pressure within the reaction vessel. An array of infrared lamps is used to radiate energy through the quartz tube; the lamps are arranged in a staggered relation relative to the quartz gussets to minimize shadowing. In addition, other non-cylindrical gusseted vessel geometries are disclosed which provide for improved sub-ambient pressure thermal processing of semiconductor wafers.

REFERENCES:
Perry's Chemical Engineer's Handbook 6th Edition. Magraw Hill NY, NY 1986 Sec. 11 pp. 11, 26 & 27.
AMC-7810/11 and AMC-7820/21 Cylindrical Epitaxial Reports Chapter 1 General Information.
IBM Technical Disclosure Bulletin "Rectangular Vapor Growth Reactor," Doo et al.

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