Semiconductor device

Details Semiconductor device Semiconductor device

2005-06-07

2005-06-07

Eckert, George (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S341000, C257S339000, C257S409000, C257S492000, C257S493000

Reexamination Certificate

active

06903418

ABSTRACT:
A semiconductor device facilitates obtaining a higher breakdown voltage in the portion of the semiconductor chip around the drain drift region and improving the avalanche withstanding capability thereof. A vertical MOSFET according to the invention includes a drain layer; a drain drift region on drain layer, drain drift region including a first alternating conductivity type layer; a breakdown withstanding region (the peripheral region of the semiconductor chip) on drain layer and around drain drift region, breakdown withstanding region providing substantially no current path in the ON-state of the MOSFET, breakdown withstanding region being depleted in the OFF-state of the MOSFET, breakdown withstanding region including a second alternating conductivity type layer, and an under region below a gate pad, and the under region including a third alternating conductivity type layer.

REFERENCES:
patent: 4754310 (1988-06-01), Coe
patent: 5216275 (1993-06-01), Chen
patent: 5438215 (1995-08-01), Tihanyi
patent: 6066878 (2000-05-01), Neilson
patent: 6081009 (2000-06-01), Neilson
patent: 6184555 (2001-02-01), Tihanyi et al.
patent: 6512268 (2003-01-01), Ueno
patent: 2003/0132450 (2003-07-01), Minato et al.

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