Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-15
2005-02-15
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S135000, C257S287000, C257S355000
Reexamination Certificate
active
06855981
ABSTRACT:
A silicon carbide power device includes a junction field effect transistor and a protective diode, which is a Zener or PN junction diode. The PN junction of the protective diode has a breakdown voltage lower than the PN junction of the transistor. Another silicon carbide power device includes a protective diode, which is a Schottky diode. The Schottky diode has a breakdown voltage lower than the PN junction of the transistor by adjusting Schottky barrier height or the depletion layer formed in the semiconductor included in the Schottky diode. Another silicon carbide power device includes three protective diodes, which are Zener diodes. Two of the protective diodes are used to clamp the voltages applied to the gate and the drain of the transistor due to surge energy and used to release the surge energy. The last diode is a thermo-sensitive diode, with which the temperature of the JFET is measured.
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Theobald et al., “An Ignition IGBT with Smart Functions in Chip on Chip Technology,”Proceedings of 2001 ISPSD, 9.33, pp. 303-306. 2001.
Kumar Rajesh
Morishita Toshiyuki
Nakamura Hiroki
Yamamoto Tsuyoshi
Denso Corporation
Posz & Bethards, PLC
Wilson Allan R.
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