Dual damascene circuit with upper wiring and interconnect...

Details Dual damascene circuit with upper wiring and interconnect... Dual damascene circuit with upper wiring and interconnect...

2005-12-20

2005-12-20

Schillinger, Laura M. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S759000, C257S750000

Reexamination Certificate

active

06977438

ABSTRACT:
A dual damascene circuit has lower wiring and upper wiring positioned in regions formed as two layers including a CH-based organic polymer layer and a low-permittivity layer made of porous MSQ or the like. The organic polymer layer and the low-permittivity layer have high etching selectively with respect to each other to form an upper groove and a via hole to a good shape, allowing upper wiring and the interconnect line to have good electric characteristics. The organic polymer layer and the low-permittivity layer are low in density and permittivity, thus reducing the effective permittivity of the dual damascene circuit in its entirety.

REFERENCES:
patent: 6191031 (2001-02-01), Taguchi et al.
patent: 6197696 (2001-03-01), Aoi
patent: 6222269 (2001-04-01), Usami
patent: 6242339 (2001-06-01), Aoi
patent: 6294833 (2001-09-01), Usami
patent: 6407011 (2002-06-01), Ikeda et al.
patent: 6483193 (2002-11-01), Usami
patent: 6603204 (2003-08-01), Gates et al.
patent: 2001/0048165 (2001-12-01), Usami
patent: 2002/0020917 (2002-02-01), Hirota et al.
patent: 2002/0081834 (2002-06-01), Daniels et al.
patent: 2002/0100984 (2002-08-01), Oshima et al.
patent: 2002/0195711 (2002-12-01), Usami
patent: 2003/0049927 (2003-03-01), Tonegawa et al.
patent: 2003/0134500 (2003-07-01), Komiya et al.
patent: 10-112503 (1998-04-01), None
patent: 11-243147 (1999-09-01), None
patent: 2000-68376 (2000-03-01), None
patent: 2000-91422 (2000-03-01), None
patent: 2000-294644 (2000-10-01), None
Merriam-Webster's Collegiate Dictionary, 10th ed., 1998, p. 14.
English Abstract of JP 2000-294644.
English Abstract of JP 11-243147.
English Abstract of JP 2000-91422.
English Abstract of JP 2000-68376.

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