Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-11-22
2005-11-22
Kunemund, Robert (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S712000, C438S717000, C216S066000
Reexamination Certificate
active
06967168
ABSTRACT:
A method and apparatus are provided for the repair of an amplitude defect in a multilayer coating. A significant number of layers underneath the amplitude defect are undamaged. The repair technique restores the local reflectivity of the coating by physically removing the defect and leaving a wide, shallow crater that exposes the underlying intact layers. The particle, pit or scratch is first removed the remaining damaged region is etched away without disturbing the intact underlying layers.
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patent: 5958605 (1999-09-01), Montcalm et al.
patent: 6277194 (2001-08-01), Thilderkvist et al.
Pierrat C. et al: “Multiple-layer blank structure for phase-shifting mask fabrication”. Third International Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors, vol. 14, No. 1, pp. 63-68, XP00212708 Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), Jan.-Feb. 1996, AIP for American Vacuum Soc, USA ISSN: 0734-211X the whole document.
Chapman Henry N.
Mirkarimi Paul B.
Stearns Daniel G.
Sweeney Donald W.
Kunemund Robert
The EUV Limited Liability Corporation
Thompson Alan H.
Woolridge John P.
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