Method of fabricating integrated circuitry

Details Method of fabricating integrated circuitry Method of fabricating integrated circuitry

2005-08-23

2005-08-23

Nguyen, Ha Tran (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S706000, C438S745000

Reexamination Certificate

active

06933224

ABSTRACT:
The invention includes methods of fabricating integrated circuitry. In one implementation, at least two different elevation conductive metal lines are formed relative to a substrate. Then, interconnecting vias are formed in a common masking step between, a) respective of the at least two different elevation conductive metal lines, and b) respective conductive nodes. Interconnecting conductive metal is provided within the interconnecting vias. Other aspects and implementations are contemplated.

REFERENCES:
patent: 4840923 (1989-06-01), Flagello et al.
patent: 5895264 (1999-04-01), Teo
patent: 6635515 (2003-10-01), Okuaki

Affiliated with

Also associated with

Rating

Method of fabricating integrated circuitry does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating integrated circuitry, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating integrated circuitry will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3499293