Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-30
2005-08-30
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S411000, C257S413000
Reexamination Certificate
active
06936901
ABSTRACT:
A semiconductor device is provided which is capable of improving its reliability by using a material having a high relative dielectric constant as a material for its gate insulating film, by suppressing degradation of an EOT (Equivalent oxide Thickness) and by preventing crystallization of the material having a high relative dielectric constant. The semiconductor device (Field Effect Transistor) has a silicon substrate, a seed layer made up of silicon oxide, a gate insulating film made of amorphous hafnium aliminate and a gate electrode made up of polycrystalline silicon formed the gate insulating film. The gate insulating film is so formed that a hafnium concentration decreases monotonously or step by step, whereas an aluminum concentration increases monotonously or step by step along a direction of a thickness of the gate insulating film from the silicon substrate side toward the gate electrode. In a boundary region between a lower layer side region and an upper layer side region in the gate insulating film, the hafnium and aluminum concentrations change continuously.
REFERENCES:
patent: 2003/0003667 (2003-01-01), Morisaki et al.
patent: 2002-314072 (2002-10-01), None
NEC Electronics Corporation
Wojciechowicz Edward
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