Plasma process apparatus

Details Plasma process apparatus Plasma process apparatus

1994-12-16

1996-06-11

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118715, 118723R, 118723IR, C23C 1600

Patent

active

055251595

ABSTRACT:
A plasma CVD apparatus for forming a silicon film on an LCD substrate includes a container which is divided into process and upper chambers by a quartz partition plate. A work table on which the substrate is mounted is arranged in the process chamber and a lower electrode to which a high frequency potential is applied is arranged in the work table. First lower and second upper supply heads are arranged between the partition plate and the work table in the process chamber. SiH.sub.4 and H.sub.2 gas and He gases are supplied through the first and second supply heads. He gas is transformed into plasma while SiH.sub.4 and H.sub.2 gas is excited and decomposed by the plasma thus formed. Two coils are arranged in the upper chamber and high frequency voltages are applied to the coils to generate electromagnetic field to induce the transforming of He gas into plasma. High frequency voltages applied to the coils are the same in phase and directions of current flowing through adjacent portions of the coils are the same.

REFERENCES:
patent: 4523544 (1985-06-01), Harada et al.
patent: 4585541 (1986-04-01), Miyake et al.
patent: 4948548 (1990-08-01), Ogle
patent: 5226967 (1993-07-01), Chen et al.
patent: 5304279 (1994-04-01), Coultas et al.

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