Solid state image sensor

Details Solid state image sensor Solid state image sensor

2005-11-29

2005-11-29

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S290000, C257S292000, C438S060000, C438S075000, C438S199000, C438S200000

Reexamination Certificate

active

06969879

ABSTRACT:
An active pixel image sensor is formed on a P-type epitaxial layer on a P-type substrate. An active pixel array is in the P-type epitaxial layer. Each pixel includes an N-well functioning as a collection node, and a P-well adjacent the N-well. The P-well includes only NMOS transistors functioning as active elements. The in-pixel transistors cooperate with off-pixel PMOS transistors to form A-D converters.

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