Bipolar transistor with upper heterojunction collector and...

Details Bipolar transistor with upper heterojunction collector and... Bipolar transistor with upper heterojunction collector and...

2005-02-22

2005-02-22

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

Reexamination Certificate

active

06858509

ABSTRACT:
A collector-up heterojunction bipolar transistor including, stacked on a substrate, an emitter layer, a base layer, and a collector layer. In this transistor the surface area of the base-emitter junction is of smaller dimensions than the surface area of the base-collector junction. Further, the material of the base layer exhibits a sensitivity of the electrical conductivity to ion implantation that is lower than the sensitivity of the electrical conductivity of the material of the emitter layer to the same ion implantation.

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Yahamhata et al. “InP/InGaAs Collector-Up Heterojunction Bipolar Transistors Fabricated Using Fe-Ion Implantation”, Conference Proceedings, Seventh International Conference on Indium Phosphide & Related Materials, IEEE, 1995 May 9-13, 1995. pp 652-655.

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