Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-11-22
2005-11-22
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S360000, C257S363000, C361S056000
Reexamination Certificate
active
06967378
ABSTRACT:
A semiconductor integrated circuit device has a MOS transistor M2including a parasitic diode Dx2for preventing a reverse current due to a parasitic diode Dx1of a MOS transistor M1. The semiconductor integrated circuit device further has a voltage setting circuit1for turning the MOS transistor M2off in a reversely biased state, and an anti-reverse-current element2for preventing a reverse current from flowing through the voltage setting circuit1in a reversely biased state. In normal operation, a direct-current voltage within the withstand voltage range of the MOS transistor M2is fed to the gate thereof according to the voltage applied to the conductive terminal6yof the MOS transistor M2.
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Inoue Koichi
Nishikawa Nobuhiro
Arent & Fox PLLC
Nadav Ori
Rohm & Co., Ltd.
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