Dual damascene semiconductor devices

Details Dual damascene semiconductor devices Dual damascene semiconductor devices

2005-02-08

2005-02-08

Thomas, Tom (Department: 2815)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S597000, C438S618000, C438S622000, C438S624000

Reexamination Certificate

active

06852619

ABSTRACT:
A semiconductor device has a wiring slot and two wiring layers connected by a via hole. The semiconductor device is formed using a photodegradable polymer film that degrades under UV radiation. An incidence angle θ of radiation rays in the irradiating step with respect to a perpendicular direction of a surface of the substrate, fulfills the relationship tan θ≧H+H′/2(D+D′) wherein D is a depth of the wiring slot, D′ is a thickness of the photoresist film, H is a diameter of the via hole in a opening of the wiring slot, and H′ is the width of the wiring slot.

REFERENCES:
patent: 5989997 (1999-11-01), Lin et al.
patent: 6187666 (2001-02-01), Singh et al.
patent: 6362093 (2002-03-01), Jang et al.
patent: 6406995 (2002-06-01), Hussein et al.
patent: 20030054629 (2003-03-01), Kawai et al.
patent: 10-223755 (1998-08-01), None
patent: 2000-188329 (2000-07-01), None

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