Method of suppressing void formation in a metal line

Details Method of suppressing void formation in a metal line Method of suppressing void formation in a metal line

2005-02-01

2005-02-01

Lebentritt, Michael (Department: 2824)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S635000, C438S648000, C438S692000

Reexamination Certificate

active

06849537

ABSTRACT:
An interconnect line that is enclosed within electrically conductive material is disclosed. The interconnect line, which is useful for electrically connecting devices in an integrated circuit, is defined by an aluminum layer having a bottom surface covered by a titanium layer, a top surface covered by a titanium layer, and opposing side surfaces covered by discrete titanium layers. The encapsulation of the aluminum layer within the titanium layers substantially precludes void formation within the aluminum layer. The interconnect line also may be upon a contact plug that is in electrical communication with an active area in an underlying semiconductor substrate.

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