First-in first-out memory circuit and method for executing same

Static information storage and retrieval – Read/write circuit

Reexamination Certificate

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Details

C365S230020, C365S233100, C365S230060

Reexamination Certificate

active

06853588

ABSTRACT:
In a first-in first-out memory circuit using a standard cell library memory, a memory block includes N number of memories (N>1). A read pointer designates read addresses of the N number of memories. A write pointer designates write addresses of the N number of memories. A memory controller selects one from the N number of memories based on the read/write addresses, generates n number of read/write clock signals by demultiplying a clock signal by n (n=N, n>1) and sends the n number of read/write clock signals having a 1
cycle difference to the N number of memories thereby inputting/outputting data.

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patent: 6754746 (2004-06-01), Leung et al.
patent: 06-052677 (1994-02-01), None
patent: 10-0223626 (1999-07-01), None

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