Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2005-02-08
2005-02-08
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
28, 28, 28
Reexamination Certificate
active
06853009
ABSTRACT:
A barrier layer made of AlxGa1-xN (0<x≦0.18) is formed in a light-emitting semiconductor device using gallium nitride compound having a multi quantum-well (MQW) structure. By controlling a composition ratio x of aluminum (Al) or thickness of the barrier layer, luminous intensity of the device is improved.An n-cladding layer made of AlxGa1-xN (0<x≦0.06) is formed in a light-emitting semiconductor device using gallium nitride compound. By controlling a composition ratio x of aluminum or thickness of the n-cladding layer, luminous intensity of the device is improved.A p-type layer and an n-type layer are formed in a light-emitting semiconductor device using gallium nitride compound having a double-hetero junction structure. By controlling a ratio of a hole concentration of the p-type layer and an electron concentration of the n-type layer approximates to 1, luminous intensity of the device is improved.
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Asami Shinya
Kato Hisaki
Koide Norikatsu
Watanabe Hiroshi
McGinn & Gibb PLLC
Rose Kiesha
Toyoda Gosei Co,., Ltd.
Zarabian Amir
LandOfFree
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