Semiconductor device having one of patterned SOI and SON...

Details Semiconductor device having one of patterned SOI and SON... Semiconductor device having one of patterned SOI and SON...

2005-06-14

2005-06-14

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S202000, C257S067000, C257S211000, C257S206000, C257S203000, C257S074000, C257S369000

Reexamination Certificate

active

06906384

ABSTRACT:
A semiconductor device includes first and second semiconductor layers and first and second MOS transistors. The first semiconductor layer is provided on and electrically connected to the semiconductor substrate. The second semiconductor layer is provided near the first semiconductor layer and formed above the semiconductor substrate via one of an insulating film and a cavity. The first and second MOS transistors are respectively provided on the first and second semiconductor layers, and each has a gate electrode arranged parallel to a boundary between the first and second semiconductor layers.

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