Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2005-10-18

2005-10-18

Kennedy, Jennifer M. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S303000, C257S500000, C257S310000

Reexamination Certificate

active

06956261

ABSTRACT:
A first DRAM section including a first memory cell having a first capacitance and a second DRAM section including a second memory cell having a second capacitance different from the first capacitance are provided on the same semiconductor substrate.

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