Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-09
2005-08-09
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S310000, C438S240000, C438S253000, C438S258000, C438S260000
Reexamination Certificate
active
06927435
ABSTRACT:
A semiconductor device comprising a semiconductor substrate, gate insulators formed on the substrate, and gate electrodes formed on the gate insulators, the gate insulators which are mainly composed of a material selected from titanium oxide, zirconium oxide and hafnium oxide, and in which compressive strain is produced and equipped with MOS transistors, can suppress leakage current flowing through the gate insulators and has high reliability.
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Ikeda Shuji
Iwasaki Tomio
Miura Hideo
Moriya Hiroshi
Pham Long
Rao Shrinivas H.
Renesas Technology Corp.
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