Semiconductor memory device having test mode

Details Semiconductor memory device having test mode Semiconductor memory device having test mode

2005-08-16

2005-08-16

Mai, Son (Department: 2827)

Static information storage and retrieval

Read/write circuit

Testing

C365S190000, C365S203000

Reexamination Certificate

active

06930938

ABSTRACT:
In a burn-in test, a sense amplifier circuit is separated from each bit line by a bit line separation switch. In this state, a bit line switch circuit connects one of complementary bit lines to a first voltage node, and connects the other complementary bit line to a second voltage node in blocks on both sides. A first bit line voltage supplied by the first voltage node and a second bit line voltage supplied by the second voltage node can be set independently of each other at least in the burn-in test.

REFERENCES:
patent: 5995427 (1999-11-01), Tsukikawa
patent: 6707738 (2004-03-01), Choi et al.
patent: 6735133 (2004-05-01), Tsukikawa
patent: 10-269775 (1998-10-01), None
patent: P2001-68634 (2001-03-01), None

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