Oxide/nitride stacked in FinFET spacer process

Details Oxide/nitride stacked in FinFET spacer process Oxide/nitride stacked in FinFET spacer process

2005-08-02

2005-08-02

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S283000, C438S286000, C438S149000

Reexamination Certificate

active

06924178

ABSTRACT:
In a FinFET integrated circuit, the fins are formed with a body thickness in the body area and then thickened in the source/drain area outside the body to improve conductivity. The thickening is performed with epitaxial deposition while the gates are covered by a composite gate cover layer to prevent thickening of the gates, which may short the gate to the source/drain.

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