Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...
Reexamination Certificate
2005-02-01
2005-02-01
Kornakov, M. (Department: 1746)
Cleaning and liquid contact with solids
Processes
Including application of electrical radiant or wave energy...
C134S031000, C134S033000, C134S036000, C134S137000, C134S149000, C134S153000, C134S184000, C134S902000, C438S906000
Reexamination Certificate
active
06848455
ABSTRACT:
Contaminants are removed from a semiconductor wafer by the in-situ generation of oxidizing species. These active species are generated by the simultaneous application of ultra-violet radiation and chemicals containing oxidants such as hydrogen peroxide and dissolved ozone. Ultrasonic or megasonic agitation is employed to facilitate removal. Radicals are generated in-situ, thus generating them close to the semiconductor substrate. The process chamber has a means of introducing both gaseous and liquid reagents, through a gas inlet, and a liquid inlet. O2, O3, and H2O vapor gases are introduced through the gas inlet. H2O and H2O2liquids are introduced through the liquid inlet. Other liquids such as ammonium hydroxide (NH4OH), hydrochloric acid (HCI), hydrofluoric acid (HF), and the like, may be introduced to further constitute those elements of the traditional RCA clean. The chemicals are premixed in a desired ration and to a predetermined level of dilution prior to being introduced into the chamber. The chamber is equipped with megasonic or ultrasonic transducer probe(s), placed in close proximity to the substrate as the substrate rotates with the rotating platen.
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Shrinivasan Krishnan
Tipton Adrianne
Curcio Robert
DeLio & Peterson LLC
Kornakov M.
Novellus Systems Inc.
Tso Roland
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