Power semiconductor device

Details Power semiconductor device Power semiconductor device

2005-06-07

2005-06-07

Loke, Steven (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S342000, C257S339000, C257S763000, C257S766000

Reexamination Certificate

active

06903417

ABSTRACT:
A semiconductor device including an N-type semiconductor substrate which includes arsenic as an impurity, a first electrode formed on a main surface of the N-type semiconductor substrate, a ground surface formed on another surface of the N-type semiconductor substrate, a second electrode formed on the ground surface and ohmically-contacted with the N-type semiconductor substrate, a semiconductor element formed in the N-type semiconductor substrate and flowing current between the first electrode and the second electrode during ON-state thereof. The device has a reduced ON-resistance thereof.

REFERENCES:
patent: 3858238 (1974-12-01), Nakamura et al.
patent: 3879230 (1975-04-01), Nakamura et al.
patent: 4751191 (1988-06-01), Gonsiorawski et al.
patent: 4853345 (1989-08-01), Himelick
patent: 4859629 (1989-08-01), Reardon et al.
patent: 4879250 (1989-11-01), Chan
patent: 4927784 (1990-05-01), Kazior et al.
patent: 4931412 (1990-06-01), Fischer et al.
patent: 4985740 (1991-01-01), Shenai et al.
patent: 5065216 (1991-11-01), Suzuki et al.
patent: 5077143 (1991-12-01), Barraclough et al.
patent: 5242862 (1993-09-01), Okabe et al.
patent: 5338961 (1994-08-01), Lidow et al.
patent: 5689130 (1997-11-01), Okabe et al.
patent: 6114193 (2000-09-01), Chang et al.
patent: 6498366 (2002-12-01), Okabe et al.
patent: 57-15420 (1982-01-01), None
patent: 57-097630 (1982-06-01), None
patent: 59-189625 (1984-10-01), None
patent: 59-213140 (1984-12-01), None
patent: 59-113629 (1985-06-01), None
patent: 61-234041 (1986-10-01), None
patent: 61-296769 (1986-12-01), None
patent: 62-23170 (1987-01-01), None
patent: 62-43123 (1987-10-01), None
patent: 62-243332 (1987-10-01), None
patent: 62-293678 (1987-12-01), None
patent: 63-253633 (1988-10-01), None
patent: 1-169970 (1989-07-01), None
patent: 58-45814 (1993-10-01), None
patent: 59-220937 (1994-12-01), None
“Semiconductor devices-Physics and technology” by Sze, 1985, p. 302.
Krishina Shenai, “Vertical-Power DMOSFET”, IEEE Elect. Device Letter, vol. No. 10, No. 3,/1989.
Krishnam Shenai, “Optimally Scaled Low-Voltage Vertical Power MOSFET's for High-Frenquency Power Conversion”, IEEE Trans. of Elect. Device vol. 37 No. 4, Apr. 1990.
C.Y. Ting et al., “The Use of Titanum-based Contact Barrier Layers in Silicon Technology”, Thin Solid Films, 96(1982) 327-345 Electronics and Optics.
Semiconductor Devices-Physics and Technology, Jan. 1985 S.M. Sze p. 307.
Alvin B. Phillips, “Transitor Engineering and Introduction to Integrated Semiconductor Circuits”, p. 76.
S. Ogawa et al. HRTEM and Nno-Scale Micro Analysis of Titanium/Silicon Interfacial Reaction Correleated With Electrical Properties, Extended Abstract.
Wolf et al. “Silicon Processing For The VLSI Era, vol. 1: Process Tech. ”, Lattice Press, 1986.
K. Shenai et al. “Characteristics of As-Deposited and Sintered Mo/LPCVD W Contacts to as, B, and P Doped Silicon”, 1988 Materials Research Sociest, p. 219-224.
K. Shenai et al. “Blanket LPCVD Tungsten Silicide Technology for Smart Power Applications”, IEEE Electron Device Letters, vol. 10, No. 6 1989m p. 270-273.
K. Shenai et al., “High-Performance Vertical-Power DMOSFET's with Selectively Silicided Gate and Source Regions”, IEEE Electron Device Letters, vol. 10, No. 4, 1989, p. 153-155.
K. Shenai et al. “Selectively Silicided Vertical Power double-diffused metal-oxide semiconductor field effect transisotrs for high-frequency power switching applications”, J. Vac. Sci. Technol. B6(6), 1988, p. 1740-1745.
H.R. Chang et al. Self-Aligned UMOSFET's with a Specific On-Resistance of , IEEE Transactions on Electron Devices, vol ED-34, No. 11, 1987, p. 2329-2334.
K. Shenai et al. “Selectively Silicided Vertical Power DMOSFET's for High-Frequency Power Conversion” Electronics Letters, vol. 25 No. 12, 1989, p. 784-785.
Webster's II New Riverside University Dictionary, 1984, p. 549.
Semiconductot devices and technology, by S.M. Sze, p. 38.

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