Memory column redundancy circuitry and method for...

Error detection/correction and fault detection/recovery – Data processing system error or fault handling – Reliability and availability

Reexamination Certificate

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C714S711000

Reexamination Certificate

active

06966012

ABSTRACT:
A column redundancy circuitry and a method for implementing the same are provided. One exemplary method provides routing for an access request addressed to a defective cell. The method includes providing a redundant column within a memory circuit, the redundant column in communication with a sense amplifier. Next, a defective cell of a memory circuit is located and the address is programmed. An access request is then processed, the access request containing the address of the defective cell Finally, the access request is routed to the redundant column through enable circuitry. Some notable advantages include the conservation of surface area of the memory circuit induced by locating the redundant column within the memory circuit. The externalization of the fuse box, Built In Self Repair region and the logic circuitry from the memory core also provide increased flexibility.

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patent: 6745354 (2004-06-01), Terzioglu
patent: 477809 (1992-04-01), None
Ilyoung Kim; Zorian, Y.; Komoriya, G.; Pham, H.; Higgins, F.P.; Lewandowski, J.L.; Built in self repair for embedded high density SRAM; Test Conference, 1998. Proceedings. International, vol., Iss., Oct. 18-23, 1998, pp.:1112-1119.
Aitken, R. et al.; Redundancy, repair, and test features of a 90nm embedded SRAM generator; Defect and Fault Tolerance in VLSI Systems, 2003. Proceedings. 18th IEEE International Symposium on, Vol., Iss., Nov. 3-5, 2003; pp.: 467-474.

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