Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-08-09
2005-08-09
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S155000, C438S161000, C438S164000
Reexamination Certificate
active
06927105
ABSTRACT:
A thin film transistor array substrate, and manufacturing methods thereof, having a dual data link structure comprised of a first data link made from a gate metal layer and of a second data link made from a transparent conductive layer. A gate pad made from the gate metal layer electrically connects directly with the first data link, and to the second data link via a data pad protection electrode that passes through contact holes. The data pad protection electrode makes surface connections to the data pad. A data line is electrically connected via a contact electrode to the first data link. The data line and the data pad are formed from different metal layers. The data pad is protected by a gate insulating layer. The contact electrode is extended from the second data link.
REFERENCES:
patent: 2002/0180898 (2002-12-01), Yoo et al.
Lee Hsien-Ming
LG.Philips LCD Co. , Ltd.
McKenna Long & Aldridge LLP
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