Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-06-07
2005-06-07
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S627000, C438S643000
Reexamination Certificate
active
06903015
ABSTRACT:
A method of manufacturing a semiconductor device, comprising the following processes of forming a structure in which a barrier metal containing at least of Ti and Ta and a copper wiring are exposed on its surface, or a structure in which at least one substance selected from the group consisting of Ti, W, and Cu and Al are exposed on its surface, above a semiconductor substrate, and supplying a hydrogen-dissolved solution dissolving hydrogen gas to the surface of the structure.
REFERENCES:
patent: 6287968 (2001-09-01), Yu et al.
patent: 6348157 (2002-02-01), Ohmi et al.
patent: 6551943 (2003-04-01), Eissa et al.
patent: 6592677 (2003-07-01), Tomimori et al.
patent: 6645852 (2003-11-01), Taguchi et al.
patent: 11-29794 (1999-02-01), None
patent: 11-307497 (1999-11-01), None
patent: 11-330023 (1999-11-01), None
patent: 2000-277520 (2000-06-01), None
patent: 2001-25715 (2001-01-01), None
patent: 2001-358111 (2001-12-01), None
patent: 2002-33385 (2002-01-01), None
Notification of First Office Action dated Jul. 30, 2004, issued by the Chinese Patent Office in counterpart Chinese application No. 031195296 and English translation of the Notification.
Notification of Reasons for Rejection dated Jan. 25, 2005, issued by the Japanese Patent Office in counterpart Japanese Application No. 2003-066676.
Kodera Masako
Matsui Yoshitaka
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Nguyen Thanh
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