Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2005-11-08
2005-11-08
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S763000, C438S785000
Reexamination Certificate
active
06962824
ABSTRACT:
A method for controlling stoichiometry of dielectric films, e.g., BST films, preferably formed at low deposition temperatures. A deposition process may use an adjustment in oxidizer flow and/or partial pressure, the provision of a hydrogen-containing component, an adjustment in hydrogen-containing component flow and/or partial pressure, an adjustment in deposition pressure, and/or a modification of system component parameters (e.g., heating a shower head or adjusting a distance between a shower head of the deposition system and a wafer upon which the film is to be deposited), to control the characteristics of the dielectric film, e.g., film stoichiometry.
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Basceri Cem
Gealy Dan
Sandhu Gurtej S.
Mueting Raasch & Gebhardt, P.A.
Picardat Kevin M.
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