Substrate etch method and device

Details Substrate etch method and device Substrate etch method and device

2005-08-23

2005-08-23

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S706000, C438S719000, C438S745000, C257S622000

Reexamination Certificate

active

06933237

ABSTRACT:
The present invention provides methods and an etched substrate. In one embodiment, a method for etching a substrate is provided which comprises creating an etch hole in the substrate using a through the substrate etch and forming a junction on an interior of the etched hole for forming a semiconductor device therein.

REFERENCES:
patent: 4160683 (1979-07-01), Roche
patent: 4303933 (1981-12-01), Horng et al.
patent: 4333227 (1982-06-01), Horng et al.
patent: 4870467 (1989-09-01), Boland et al.
patent: 4978639 (1990-12-01), Hua et al.
patent: 5164813 (1992-11-01), Blackstone et al.
patent: 5316965 (1994-05-01), Philipossian et al.
patent: 5531017 (1996-07-01), Church et al.
patent: 6281094 (2001-08-01), Abiko et al.
patent: 6287926 (2001-09-01), Hu et al.
patent: 6316287 (2001-11-01), Zandman et al.
patent: 6656843 (2003-12-01), Bol
patent: 2001/0001900 (2001-05-01), Pogge et al.
patent: 2001/0009177 (2001-07-01), Lou et al.
patent: 2001/0009298 (2001-07-01), Zandman et al.

Affiliated with

Also associated with

Rating

Substrate etch method and device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Substrate etch method and device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Substrate etch method and device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3482845