Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-12-20
2005-12-20
Lebentritt, Michael (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000, C438S637000, C438S700000
Reexamination Certificate
active
06977216
ABSTRACT:
The present invention relates to a method for forming a metal wire in a semiconductor device. The method comprises the steps of forming a lower metal wire on a semiconductor substrate, depositing an insulating film on the lower metal wire, forming a damascene etch pattern in the insulating film, depositing a conductive material on the insulating film so that the conductive material fills the damascene etch pattern, thus forming a conductive layer including step portions, depositing, on the conductive layer, a material having a high etch selective ratio against the conductive material, thus forming an anti-etch film, stripping a part of the anti-etch film by means of a CMP process until the conductive layer is exposed, striping a portion of the conductive layer by means of an etch process using the anti-etch film as an etch mask, and stripping the remaining anti-etch film and conductive layer by means of a CMP process, thus forming a conductive wire with which the damascene etch pattern is filled. Therefore, a large amount of slurry and the usage of a pad depending on a long-time polishing in a CMP process can be reduced. It is thus possible to save a process cost price in development and production of a semiconductor device.
REFERENCES:
patent: 6235629 (2001-05-01), Takenaka
patent: 6252290 (2001-06-01), Quek et al.
Huynh Yennhu B.
Hynix / Semiconductor Inc.
Lebentritt Michael
Mayer Brown Rowe & Maw LLP
LandOfFree
Method for forming metal wire in semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming metal wire in semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming metal wire in semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3482529