Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2005-08-02
2005-08-02
Lee, John R. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S3960ML, C250S492100, C250S492200, C250S398000
Reexamination Certificate
active
06924494
ABSTRACT:
An immersion lens for a charged particle beam lithography system includes a magnetically floating shield that limits a deflection magnetic field from creating eddy currents in electrically conductive components of the system downstream from the shield. The surface of the shield lies parallel or approximately parallel to a magnetic equipotential surface of the focusing magnetic field so that the shield does not affect the focusing magnetic field. The shield is, e.g., a ferrite disk or a hollow ferrite cone defining a central bore for passage of the charged particle beam.
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DeVore William J.
Veneklasen Lee H.
Applied Materials Inc.
Church Shirley L.
Lee John R.
Vanore David A.
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