System and method for sensing a magnetic field

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field

Reexamination Certificate

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C257S427000

Reexamination Certificate

active

06960816

ABSTRACT:
A magnetic field sensor includes a transistor device having a base region, an emitter region, and a collector region. A barrier region disposed between the emitter region and the collector region to hamper charge carriers injected into the base region from the emitter region from reaching at least a portion of the collector region. The magnetic field sensor further includes a first voltage source to bias the collector region with respect to the base region to form a space-charge layer associated with the collector region.

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Woo et al., “Lateral NPN Bipolar Transistor for High Current Gain Applications at Reduced Temperatures,” Sep. 18, 1989, pp. 152-155.
International Search Report for Application No.: PCT/US2004/013179 dated Oct. 25, 2004.

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