Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip
Reexamination Certificate
2005-02-08
2005-02-08
Eckert, George (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Flip chip
C257S666000, C257S676000, C257S678000, C257S684000, C257S688000, C257S690000, C257S783000, C361S777000, C361S779000, C361S783000, C438S106000, C438S107000, C438S108000, C438S118000, C438S119000, C174S250000, C174S256000, C174S257000, C174S259000
Reexamination Certificate
active
06853086
ABSTRACT:
A method of manufacture of a semiconductor device comprises a step of providing an adhesive (30) between a semiconductor chip (20) and a substrate (10), a step of positioning electrodes (22) and leads (12) to oppose each other, and a step of applying pressure in the direction of making the gap between the semiconductor chip (20) and substrate (10) narrower, and on the substrate (10), in a region opposing the surface of the semiconductor chip (20) and avoiding the leads (12), a film (14) is formed with lower adhesion with the adhesive (30) than the substrate (10).
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Chu Chris
Eckert George
Oliff & Berridg,e PLC
Seiko Epson Corporation
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