Nonvolatile multivalue memory

Static information storage and retrieval – Floating gate – Particular biasing

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36518526, 36518529, G11C 1134

Patent

active

056027796

ABSTRACT:
A nonvolatile multivalue memory includes a memory cell transistor having a floating gate for holding nonvolatile information, and a control gate, connected to the word line, for controlling writing, erasing, or reading of information held in the floating gate. A drive signal (WDPOUT) alternately and repeatedly having one of a plurality of types of positive potentials (+2/+3/+4 V) and a negative potential (-10 V) different from the positive potentials is supplied to a word line to which the control gate of this memory cell transistor is connected.

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