Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2005-06-28
2005-06-28
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S685000
Reexamination Certificate
active
06911381
ABSTRACT:
A diffusion barrier layer comprising TiNxByis disclosed for protection of gate oxide layers in integrated transistors. The diffusion barrier layer can be fabricated by first forming a TiN layer and then incorporating boron into the TiN layer. The diffusion barrier layer can also be fabricated by forming a TiNxBylayer using a TDMAT process including boron. The diffusion barrier layer can also be fabricated by forming a TiNxBylayer using a CVD process. The diffusion barrier layer is of particular utility in conjunction with tungsten or tungsten silicide conductive layers formed by CVD.
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Baker, et al. “Combined X-Ray Photoelectron/auger Electron Spectroscopy/Glaning Angle X-Ray diffraction/Extended X-Ray Absorbtion Fine Structure Investigation of TiBxNy Coatings”, J. Vac. Sci. Technol., A 15(2), pp. 284-291. Mar./Apr. 1997.
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Agarwal Vishnu K.
Sandhu Gurtej S.
Coleman W. David
Knobbe Martens & Olson Bear LLP.
Micro)n Technology, Inc.
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