Power transistor structure with non-uniform metal widths

Details Power transistor structure with non-uniform metal widths Power transistor structure with non-uniform metal widths

2005-08-23

2005-08-23

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S368000, C257S382000

Reexamination Certificate

active

06933562

ABSTRACT:
A power transistor structure uses metal drain and source strips with non-uniform widths to reduce variations in current density across the power transistor structure. The reductions in current density, in turn, reduce the source-to-drain turn on resistance and maximize the overall current carrying capacity of power transistor structure.

REFERENCES:
patent: 6084277 (2000-07-01), Disney et al.
patent: 6555883 (2003-04-01), Disney et al.
patent: 6728942 (2004-04-01), Lampaert et al.
patent: 6750489 (2004-06-01), Merrill

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