Magnetoelectronic device with variable magnetic write field

Details Magnetoelectronic device with variable magnetic write field Magnetoelectronic device with variable magnetic write field

Filed on

2005-10-25

Date issued

2005-10-25

Examiner

Auduong, Gene N. (Department: 2818)

Patent Class

Static information storage and retrieval

SubClass

Systems using particular element

SubSubClass

Magnetoresistive

Other Related Categories

C365S170000, C257S295000

Type

Reexamination Certificate

Status

active

Patent number

06958930

Description

ABSTRACT:
A new magnetic spin device can be used as a memory element or logic gate, such as an OR, AND, NOT, NOR and NAND gate. The state of the magnetic spin device is set inductively. A magnetic spin transistor/gate can be operated with current gain. Furthermore, inductive coupling permits the linking of multiple spin transistors and spin transistor gates to perform combinational tasks. A half adder embodiment is specifically described, and other logic gates and combinations of half adders can be constructed to perform arithmetic functions as part of a microprocessor.

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