Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Reexamination Certificate
2005-12-27
2005-12-27
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
C257S784000, C257S357000, C257S691000, C257S203000, C257S205000, C257S206000, C257S207000, C257S382000, C257S360000, C257S401000, C257S377000, C257S409000, C257S173000, C257S362000, C257S384000, C257S111000, C257S356000, C257S603000, C257S372000, C361S056000, C361S111000, C361S220000, C361S091200
Reexamination Certificate
active
06979908
ABSTRACT:
A described embodiment of the present invention includes an integrated circuit having a plurality of I/O modules. The I/O modules include a bond pad formed on a substrate. The I/O modules also include an electrostatic discharge device formed in the substrate. The electrostatic discharge device is at least partially formed beneath the bond pad. The I/O module also includes an I/O buffer formed in the substrate. The I/O buffer is connected to the bond pad. The I/O buffer provides communication between the bond pad and circuitry formed in the substrate. The circuitry is positioned substantially adjacent to both the electrostatic discharge device and the I/O buffer.
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Brady III Wade James
Neerings Ronald O.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Williams Alexander Oscar
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