Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2005-11-29
2005-11-29
Cantelmo, Gregg (Department: 1745)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C438S688000
Reexamination Certificate
active
06969448
ABSTRACT:
A method for fabricating a metallization structure is presented. The method preferably includes ion metal plasma depositing a wetting layer within a cavity defined in a dielectric layer. The wetting layer preferably includes titanium. The method preferably further includes sputter depositing a bulk metal layer within the cavity and upon the wetting layer. Sputter depositing of the bulk metal layer is preferably performed in a single deposition chamber at least until the cavity is substantially filled.
REFERENCES:
patent: 4970176 (1990-11-01), Tracy et al.
patent: 5108570 (1992-04-01), Wang
patent: 5108951 (1992-04-01), Chen et al.
patent: 5270255 (1993-12-01), Wong
patent: 5288665 (1994-02-01), Nulman
patent: 5358616 (1994-10-01), Ward
patent: 5371042 (1994-12-01), Ong
patent: 5378660 (1995-01-01), Ngan et al.
patent: 5443995 (1995-08-01), Nulman
patent: 5600182 (1997-02-01), Schinella et al.
patent: 5658828 (1997-08-01), Lin et al.
patent: 5665659 (1997-09-01), Lee et al.
patent: 5693564 (1997-12-01), Yu
patent: 5731245 (1998-03-01), Joshi et al.
patent: 5882488 (1999-03-01), Leiphart
patent: 5962923 (1999-10-01), Xu et al.
patent: 5985759 (1999-11-01), Kim et al.
patent: 6045666 (2000-04-01), Satitpunwaycha et al.
patent: 6080665 (2000-06-01), Chen et al.
patent: 6093654 (2000-07-01), Koyama
patent: 6156645 (2000-12-01), Geha et al.
patent: 6176983 (2001-01-01), Bothra et al.
patent: 6177350 (2001-01-01), Sundarrajan et al.
patent: 6217721 (2001-04-01), Xu et al.
S.M. Rossnagel et al. “Metal ion depisiton from ionized magnetron sputtering discharge”, J. vac Sci. Technol. B 12(1), pp 449-453, Jan. 1994.
S.M. Rossnagel et al. “Magnetron sputter deposition with high levels of metal ionization”, Appl. Phys. Lett. 63 (24), pp 3285-3287, Dec. 1993.
Xu et al., “Plar Multilevel Metallization Technologies for ULSI Devices,” SPIE vol. 2335, 1994, pp. 70-79.
Xu et al., “A1 planarization processes for multilayer metallization of quarter micrometer devices,” Thin Solid Films, vol. 253, 1994, pp. 367-371.
Singer, “The Interconnect Challenge: Filling Small, High Aspect Ratio Contact Holes,” Semiconductor International, Aug. 1994, 5 pages.
Robinson, “A1 hits sub-0.25 micron vias,” pp. 37 and 42, Electronic Engineering Times, Issue 939, Feb. 1997.
Metal Deposition Products, Applied Materials-Products and Services, 5 pages, printed Nov. 1999, © 1999 Applied Materials, Inc.
“Ionized Physical Vapor Deposition,” printed Dec. 1999, www.ece.neu.edu/edsnu/hopwood, 8 pages.
Cypress Semiconductor Corp.
Daffer Kevin L.
Daffer McDaniel LLP
Lettang Mollie E.
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