Semiconductor memory with strongly adhesive electrode

Details Semiconductor memory with strongly adhesive electrode Semiconductor memory with strongly adhesive electrode

2005-08-09

2005-08-09

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S310000

Reexamination Certificate

active

06927439

ABSTRACT:
A semiconductor device equipped with information storage capacitor comprising a first capacitor electrode, an oxide film, a second capacitor electrode and insulating films containing silicon as a main constituting element, wherein at least one of first and second capacitor electrodes contains as a main constituting element at least one element selected from rhodium, ruthenium, iridium, osmium and platinum, and as an adding element at least one element selected from palladium, nickel, cobalt and titanium, is excellent in adhesiveness between the capacitor electrodes and the insulating films.

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Wolf, “Silicon Processing for the VLSI Era, vol. 2—Process Integration,” 1990, Lattice Press, vol. 2, pp. 194-196.

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