Thin-film transistor and method for making the same

Details Thin-film transistor and method for making the same Thin-film transistor and method for making the same

2005-08-23

2005-08-23

Lee, Eddie (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S128000, C438S048000, C438S151000, C438S157000, C438S283000

Reexamination Certificate

active

06933180

ABSTRACT:
A bottom-gate thin-film transistor includes a gate electrode, a gate insulating film, an active layer, and a protective insulating film deposited in that order on a substrate. The protective insulating film has a thickness of 100 nm or less, and the protective insulating film is formed on any one of the active layer, and LDD region, and a source-drain region. A method for making a bottom-gate thin-film transistor, a liquid crystal display device including a TFT substrate using the bottom-gate thin-film transistor and a method for fabricating the same, and an organic EL device including the bottom-gate thin-film transistor and a method for fabricating the same are also disclosed.

REFERENCES:
patent: 5103330 (1992-04-01), Fukami et al.
patent: 5726461 (1998-03-01), Shimada et al.
patent: 6063654 (2000-05-01), Ohtani
patent: 6218206 (2001-04-01), Inoue et al.
patent: 6246070 (2001-06-01), Yamazaki et al.
patent: 6265730 (2001-07-01), Nakanishi et al.
patent: 6281552 (2001-08-01), Kawasaki et al.
patent: 6358766 (2002-03-01), Kasahara
patent: 6420758 (2002-07-01), Nakajima
patent: 6424012 (2002-07-01), Kawasaki et al.
patent: 6433361 (2002-08-01), Zhang et al.
patent: 6582837 (2003-06-01), Toguchi et al.
patent: 2002/0000555 (2002-01-01), Fujikawa et al.

Affiliated with

Also associated with

Rating

Thin-film transistor and method for making the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin-film transistor and method for making the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin-film transistor and method for making the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3471864