Integrated circuit cells

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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Details

C716S030000, C716S030000

Reexamination Certificate

active

06954918

ABSTRACT:
According to one embodiment of the invention, a method for designing an integrated circuit is provided. The method includes providing a first transistor in a first logic path. The first transistor has a first contact, a first gate length and a first contact to gate centerline spacing. The method also includes providing a second transistor in a second logic path. The second transistor has a second contact, a second gate length and a second contact to gate centerline spacing. The first contact to gate centerline spacing is substantially equal to the second contact to gate centerline spacing. The method also includes selecting a different gate length for the first gate length using a predetermined design criterion.

REFERENCES:
patent: 6369412 (2002-04-01), Ueda et al.
patent: 6453447 (2002-09-01), Gardner et al.

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