Ferroelectric memory device using via etch-stop layer and...

Details Ferroelectric memory device using via etch-stop layer and... Ferroelectric memory device using via etch-stop layer and...

2005-06-21

2005-06-21

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S308000, C257S760000

Reexamination Certificate

active

06909134

ABSTRACT:
A ferroelectric memory device and a method for manufacturing the same. The ferroelectric memory device comprises a lower interlayer insulating layer formed on a semiconductor substrate. The ferroelectric memory device further comprises at least two adjacent ferroelectric capacitors disposed on the lower interlayer insulating layer, an interlayer insulation layer formed over the ferroelectric capacitors, leaving a top surface of the ferroelectric capacitors exposed, a patterned via etch-stop layer formed on the interlayer insulation layer, leaving the top surface of the capacitors exposed, an upper interlayer insulating layer formed on the patterned via etch-stop layer, and a plate line commonly connected to the at least two adjacent ferroelectric capacitors. Thus, integration of the ferroelectric memory device can be substantially increased.

REFERENCES:
patent: 5536672 (1996-07-01), Miller et al.
patent: 6485988 (2002-11-01), Ma et al.
patent: 6528386 (2003-03-01), Summerfelt et al.
patent: 6541367 (2003-04-01), Mandal
patent: 6576941 (2003-06-01), Lee et al.
patent: 6600185 (2003-07-01), Tani et al.
patent: 6730601 (2004-05-01), Harris et al.
patent: 2003/0141527 (2003-07-01), Joo et al.
patent: 2003/0205734 (2003-11-01), Lee et al.

Affiliated with

Also associated with

Rating

Ferroelectric memory device using via etch-stop layer and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferroelectric memory device using via etch-stop layer and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric memory device using via etch-stop layer and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3467975