Ferroelectric memory device and control method thereof

Details Ferroelectric memory device and control method thereof Ferroelectric memory device and control method thereof

2005-11-22

2005-11-22

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S230060, C365S189050

Reexamination Certificate

active

06967860

ABSTRACT:
A ferroelectric random access memory device including a pulse generator circuit capable of generating a pulse signal in response to an address transition. A chip enable buffer circuit activates a chip enable flag signal in response to a first transition of the pulse signal. A row selector circuit selects and drives one of the rows in response to the address. The row selector circuit also generates a flag signal indicating a selection of a plate line. A control circuit activates a plate control signal in response to the activation of a write enable signal, and deactivates the plate control signal in response to a second transition of the pulse signal. A plate line of a selected row is re-activated according to activation of the plate control signal and is deactivated according to deactivation of the plate control signal.

REFERENCES:
patent: 6385078 (2002-05-01), Jeon
patent: 6847537 (2005-01-01), Jeon et al.

Affiliated with

Also associated with

Rating

Ferroelectric memory device and control method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferroelectric memory device and control method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric memory device and control method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3467645